Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin
US5600151A · kind A · utility
12Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1995 |
| Grant date | Feb 4, 1997 |
| Priority date | — |
| Expiry date | Feb 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a stress-buffering film which is effective in buffering the stress caused by a molding resin during sealing, the stress-buffering film being made of a silicone ladder resin represented by formula (I) ##STR1## wherein each end group R may be the same or different and represents a hydrogen atom or an alkyl group, each side chain R' may be the same or different and represents a cyclohexyl group, a lower alkyl group, or a photopolymerizable unsaturated group, and n is an integer of 10 or larger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.