Hiroshi Tobimatsu
12Patents
5h-index
24Co-inventors
66Inventor score
Filing activity: Mar 29, 1990 → Nov 29, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5171711A | Method of manufacturing integrated circuit devices | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5600151A | Semiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resin | Electricity | 12 | Expired |
| US6046488A | Semiconductor device having conductive layer and manufacturing method thereof | Electricity | 9 | Expired |
| US6645859B1 | Semiconductor device and manufacturing method thereof | Electricity | 8 | Expired |
| US7154184B2 | Interconnection structure of semiconductor device | Electricity | 7 | Expired |
| US5126828A | Wafer scale integration device | Electricity | 5 | Expired |
| US6544904B1 | Method of manufacturing semiconductor device | Electricity | 4 | Expired |
| US7851355B2 | Method of manufacturing semiconductor device | Electricity | 1 | Active |
| US7582950B2 | Semiconductor chip having gettering layer, and method for manufacturing the same | Electricity | 1 | Active |
| US7489040B2 | Interconnection structure of semiconductor device | Electricity | 0 | Active |
| US8021979B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US6759317B2 | Method of manufacturing semiconductor device having passivation film and buffer coating film | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.