Semiconductor element and semiconductor memory device using the same
US5600163A · kind A · utility
19Cited by
5References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1994 |
| Grant date | Feb 4, 1997 |
| Priority date | — |
| Expiry date | Aug 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.