Low voltage triggering silicon controlled rectifier structures for ESD protection

US5602404A · kind A · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Hung-Sheng Chen · San Jose, US
• Chin-Miin Shyu · San Jose, US
• C. S. Teng · San Jose, US

Key dates

• Filing date: Jan 18, 1995
• Grant date: Feb 11, 1997
• Expiry date: Jan 18, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

Silicon controlled rectifier (SCR) structures are provided that are triggered by lightly doped diffusion (LDD) junction breakdown voltages of approximately 4-10 V. The SCR structures eliminate the need for the field plate diode and resistor secondary protection elements found in conventional SCR-based ESD protection circuits, thus minimizing RC delay on the signal line and reducing circuit size. The SCR structures are compatible with existing CMOS processes and are scalable to submicron technology.