Semiconductor device having polycrystalline silicon load devices
US5602408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1995 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Apr 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/15
Abstract
A semiconductor device comprises a silicon semiconductor substrate and an insulating film formed on a surface of the silicon semiconductor substrate. One of a surface of the silicon semiconductor substrate or a surface of the insulating film is provided with at least one step portion. A polycrystalline silicon layer is formed uniformly on at least a side surface of the step portion and a top surface of the insulating film. The polycrystalline silicon layer which is formed on the side surface of the step portion comprises a resistance element, and a portion of the polycrystalline silicon layer which is formed on the top surface of the insulating film is doped with an impurity to form a conductive element. By this construction, the area occupied by the load devices on the semiconductor substrate is effectively reduced, thereby increasing the packing density of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.