Low-noise bipolar transistor operating predominantly in the bulk region
US5602417A · kind A · utility
9Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 1994 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Sep 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A low-noise NPN transistor comprising a cut-off region laterally surrounding, at a given distance, the emitter region in the surface portion of the transistor and of such conductivity as to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cut-off region is formed by a P ring astride a P.sup.- type well region and the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.