Flavio Villa
26Patents
11h-index
16Co-inventors
68Inventor score
Filing activity: May 21, 1985 → Nov 27, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5530345A | An integrated hall.cndot.effect apparatus for detecting the position of a magnetic element | Electricity | 84 | Expired |
| US5855693A | Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication | Electricity | 37 | Expired |
| US5883009A | Method of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensor | Electricity | 28 | Expired |
| US6472244B1 | Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material | Performing Operations; Transporting | 21 | Expired |
| US5828124A | Low-noise bipolar transistor | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6131466A | Integrated piezoresistive pressure sensor | Physics | 14 | Expired |
| US5434445A | Junction-isolated high-voltage MOS integrated device | Electricity | 13 | Expired |
| US6232140A | Semiconductor integrated capacitive acceleration sensor and relative fabrication method | Physics | 13 | Expired |
| US5756387A | Method for forming zener diode with high time stability and low noise | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5583365A | Fully depleted lateral transistor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6171931A | Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication | Electricity | 11 | Expired |
| US4979008A | Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6104073A | Semiconductor integrated capacitive acceleration sensor and relative fabrication method | Physics | 11 | Expired |
| US5602417A | Low-noise bipolar transistor operating predominantly in the bulk region | Electricity | 9 | Expired |
| US4682197A | Power transistor with spaced subtransistors having individual collectors | Electricity | 9 | Expired |
| US5496761A | Method of making junction-isolated high voltage MOS integrated device | Electricity | 7 | Expired |
| US4672235A | Bipolar power transistor | Electricity | 6 | Expired |
| US5605850A | Method for making a low-noise bipolar transistor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4783693A | Driver element for inductive loads | Electricity | 6 | Expired |
| US6417021B1 | Method of fabricating a piezoresistive pressure sensor | Physics | 6 | Expired |
| US5595921A | Method for fabricating a fully depleted lateral transistor | Emerging Cross-Sectional Technologies | 5 | Expired |
| US4886982A | Power transistor with improved resistance to direct secondary breakdown | Electricity | 5 | Expired |
| US4663647A | Buried-resistance semiconductor device and fabrication process | Electricity | 3 | Expired |
| US6529140B1 | Magnetic bi-dimensional position sensor | Physics | 3 | Expired |
| US4821136A | Power transistor with self-protection against direct secondary breakdown | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.