Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
US5603765A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1995 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Apr 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs layer by MBE at a substrate temperature about 70.degree.-125.degree. C. below the temperature at which a 2.times.4 reflective high energy diffraction pattern is observed. This corresponds to a growth temperature range of about 415.degree.-470.degree. C. for a 540.degree. 2.times.4 reconstruction temperature. Preferred growth temperatures within these ranges are 80.degree. C. below the 2.times.4 reconstruction temperature, or about 460.degree. C. Higher breakdown voltages are obtained than when the AlInAs layer is grown at either higher or lower temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.