Semiconductor laser
US5604764A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1996 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Mar 5, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor laser includes forming a mask having a stripe opening in a <011> direction on a {100} surface of a first conductivity type substrate, and growing a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer on the {100} surface using the mask, thereby producing a stripe-shaped ridge in which the active layer and the first conductivity type lower cladding layer are covered with the second conductivity type upper cladding layer. The stripe-shaped ridge has an ordinary mesa-shaped cross-section in a direction perpendicular to the stripe direction and a symmetrical hexagonal cross-section in the stripe direction. In this method, since the conventional selective etching for forming the ridge is dispensed with, the processing precision of the ridge is improved. Further, the second conductivity type cladding layer and the active layer grown on the side surfaces of the first conductivity type cladding layer are very thin and have low dopant incorporating efficiencies, so that portions of the first conductivity type cladding layer grown at the side surfaces of the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.