High frequency magnetron plasma apparatus
US5605576A · kind A · utility
22Cited by
6References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 9, 1994 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Nov 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.