Etch profile shaping through wafer temperature control

US5605600A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Siemens Aktiengesellschaft · DE
• Kabushiki Kaisha Toshiba · JP

Inventors

• Karl Paul Muller · Wappingers Falls, US
• Klaus Roithner · Aßling, DE
• Bernhard Poschenrieder · Saint-Cloud, FR
• Toru Watanabe · Niigata, JP

Key dates

• Filing date: Mar 13, 1995
• Grant date: Feb 25, 1997
• Expiry date: Mar 13, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3065
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.