Method for making a low-noise bipolar transistor
US5605850A · kind A · utility
6Cited by
7References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
Abstract
A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity is to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cutoff region is formed by an N.sup.+ -type enriched base region arranged between the emitter region and the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.