Silicon oxide resonant tunneling diode structure
US5606177A · kind A · utility
138Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1994 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Dec 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings (430) have an irregular (nonperiodic) shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.