Robert M. Wallace
55Patents
22h-index
55Co-inventors
91Inventor score
Filing activity: Jun 9, 1983 → Jun 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6013553A | Zirconium and/or hafnium oxynitride gate dielectric | Electricity | 808 | Expired |
| US5610438A | Micro-mechanical device with non-evaporable getter | Physics | 308 | Expired |
| US6020243A | Zirconium and/or hafnium silicon-oxynitride gate dielectric | Electricity | 267 | Expired |
| US5523878A | Self-assembled monolayer coating for micro-mechanical devices | Physics | 169 | Expired |
| US6291867A | Zirconium and/or hafnium silicon-oxynitride gate dielectric | Electricity | 151 | Expired |
| US5606177A | Silicon oxide resonant tunneling diode structure | Electricity | 138 | Expired |
| US5316793A | Directed effusive beam atomic layer epitaxy system and method | Chemistry; Metallurgy | 132 | Expired |
| US5512374A | PFPE coatings for micro-mechanical devices | Emerging Cross-Sectional Technologies | 120 | Expired |
| US5482564A | Method of unsticking components of micro-mechanical devices | Performing Operations; Transporting | 117 | Expired |
| US6291866A | Zirconium and/or hafnium oxynitride gate dielectric | Electricity | 117 | Expired |
| US6624944B1 | Fluorinated coating for an optical element | Physics | 108 | Expired |
| US6150242A | Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode | Electricity | 103 | Expired |
| US6024801A | Method of cleaning and treating a semiconductor device including a micromechanical device | Performing Operations; Transporting | 97 | Expired |
| US4567432A | Apparatus for testing integrated circuits | Physics | 74 | Expired |
| US5614785A | Anode plate for flat panel display having silicon getter | Electricity | 62 | Expired |
| US5453659A | Anode plate for flat panel display having integrated getter | Electricity | 59 | Expired |
| US5689151A | Anode plate for flat panel display having integrated getter | Electricity | 37 | Expired |
| US5520563A | Method of making a field emission device anode plate having an integrated getter | Electricity | 36 | Expired |
| US6552388B2 | Hafnium nitride gate dielectric | Electricity | 31 | Expired |
| US6258637A | Method for thin film deposition on single-crystal semiconductor substrates | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6841439B1 | High permittivity silicate gate dielectric | Electricity | 25 | Expired |
| US6436801B1 | Hafnium nitride gate dielectric | Electricity | 24 | Expired |
| US6140243A | Low temperature process for post-etch defluoridation of metals | Electricity | 22 | Expired |
| US6335238B1 | Integrated dielectric and method | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5352330A | Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.