High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
US5607602A · kind A · utility
37Cited by
6References
28Claims
0Family size
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Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.