Method and arrangement for characterizing micro-size patterns
US5607800A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 15, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Feb 15, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and arrangement for characterizing features of a patterned material on an underlying layer is disclosed. According to the method, the patterned material is subjected to radiation including a range of wavelengths such that the patterned material absorbs more radiation than the underlying layer, and the underlying layer reflects more radiation than the patterned material. Zeroth order reflected radiation is measured and the reflectance measurement is expressed as a spectrum of the intensity of the reflected radiation as a function of the wavelength of the reflected radiation, or as an average reflectance over a range of wavelengths. The reflectance measurement can be correlated with features of the patterned material. An arrangement of equipment is disclosed for characterizing features of a patterned material according to the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.