Method for forming contact openings in a multi-layer structure that reduces overetching of the top conductive structure
US5607873A · kind A · utility
11Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The overetching that occurs during the formation of contact openings in a substantially planarized layer of insulation material is substantially reduced by changing the thickness of the insulation material that is formed over the top conductive structure of a semiconductor device, and by forming the openings to the top conductive structure during the fabrication of a second metal layer rather than during the formation of a first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.