FET optical receiver using backside illumination, indium materials species
US5608255A · kind A · utility
41Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | May 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
Abstract
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.