Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof
US5608266A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and a device directed to the same, for stabilizing cobalt silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt silicide/silicon structure. The steps of the method include forming a silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the silicide germanide by a standard annealing treatment. Alternatively, the cobalt silicide or cobalt germanide can be formed after the formation of the silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the silicide or germanide will structurally degrade is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.