Curing hydrogen silsesquioxane resin with an electron beam
US5609925A · kind A · utility
42Cited by
9References
10Claims
0Family size
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Key dates
| Filing date | Dec 4, 1995 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Dec 4, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature method of forming silica-containing ceramic coatings on substrates in which a coating containing hydrogen silsesquioxane resin is applied on a substrate and exposed to an electron beam for a time sufficient to convert the hydrogen silsesquioxane resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.