Processing methods for high-dielectric-constant materials
US5609927A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing techniques for processing high-dielectric-constant material are provided to allow for the formation of an electronic device (10) which comprises a inner electrode (24), a high-dielectric-constant layer (28), and an outer electrode (30). High-dielectric-constant layer (28) is subjected to ultraviolet radiation in an oxygen ozone ambient to eliminate various undesirable hydroxide and carbonate compounds. Layer (28) is further subjected to high pressure isotropic reactive ion etches prior to the deposition of layer (30). The interface between layer (28) and layer (30) is exposed to reactive fluorine and low pressure plasma to improve the fair electric properties and leakage currents associated with layer (28).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.