Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US5610106A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 10, 1995 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Mar 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.