AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
US5612551A · kind A · utility
6Cited by
3References
8Claims
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Key dates
| Filing date | Jun 27, 1996 |
| Grant date | Mar 18, 1997 |
| Priority date | — |
| Expiry date | Jun 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.