Leak detection system for a gas manifold of a chemical vapor deposition apparatus
US5614249A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1995 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Aug 28, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A chemical vapor deposition apparatus includes a gas manifold having a first gas flow port through which a gas flow path extends, and a first peripheral surface which extends about the first gas flow port. The chemical vapor deposition apparatus further includes a second gas flow port through which the gas flow path extends, and a second peripheral surface extending about the second gas flow port. A connection of the gas manifold is provided such that the first and second peripheral surfaces substantially mutually engage intended for providing a substantial seal of the gas flow path. A groove is provided in at least one of the first and second peripheral surfaces and extends so as to communicate with at least one of the first and second gas flow ports. The groove facilitates flow of a test gas therein from outside the chemical vapor deposition apparatus towards the respective gas flow port. A method for checking seals of a chemical vapor deposition apparatus gas manifold includes providing groove in a least one of a pair of mutually engaging peripheral surfaces which surround a gas flow port through which a gas flow path of the gas manifold extends. The groove extends so as to comm…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.