Method of making a planar wiring in an insulated groove using alkylaluminum hydride
US5614439A · kind A · utility
20Cited by
19References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1995 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Feb 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.