MBE apparatus and gas branch piping apparatus
US5616181A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1995 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | Nov 21, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An MBE apparatus includes a reaction chamber in which a molecular beam of a gas irradiates a substrate for crystal growth; a gas bomb containing the gas; a regulator for reducing the pressure of the gas from the gas bomb; a pressure control apparatus having one or more anode and cathode electrodes, a coil for generating a magnetic field applied to the supplied gas, and a controller for controlling the electric field between the anode and cathode electrodes, the area of the anode and cathode electrodes, and the magnetic field generated by the coil, so that a molecular beam irradiates the substrate with the gas supplied. The supply of the gas may be quickly varied with high reproducibility and high precision. In addition, a semiconductor layer having a uniform carrier concentration can be easily formed on the semiconductor substrate or a semiconductor layer having a uniform composition ratio can be easily formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.