Yoshitsugu Yamamoto
28Patents
7h-index
38Co-inventors
69Inventor score
Filing activity: Dec 19, 1994 → Oct 24, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5796127A | High electron mobility transistor | Electricity | 207 | Expired |
| US5616181A | MBE apparatus and gas branch piping apparatus | Chemistry; Metallurgy | 65 | Expired |
| US6570390B2 | Method for measuring surface leakage current of sample | Physics | 41 | Expired |
| US5677553A | Semiconductor device strucutre having a two-dimensional electron gas and contact thereto | Electricity | 32 | Expired |
| US6043520A | III-V heterojunction bipolar transistor having a GaAs emitter ballast | Electricity | 30 | Expired |
| US5811843A | Field effect transistor | Electricity | 18 | Expired |
| US5729030A | Semiconductor device | Electricity | 10 | Expired |
| US5682045A | Method of fabricating semiconductor device and semiconductor device fabricated thereby | Electricity | 6 | Expired |
| US7420684B2 | Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level | Physics | 4 | Expired |
| US7612633B2 | High-frequency switch | Electricity | 3 | Active |
| US8247844B2 | Semiconductor device and manufacturing method thereof | Electricity | 3 | Active |
| US6037242A | Method of making hetero-structure | Electricity | 3 | Expired |
| US7038768B2 | Optical measuring method for semiconductor multiple layer structures and apparatus therefor | Physics | 2 | Expired |
| US9159654B2 | Semiconductor device | Electricity | 2 | Active |
| US7528443B2 | Semiconductor device with recessed gate and shield electrode | Electricity | 2 | Active |
| US5874753A | Field effect transistor | Electricity | 2 | Expired |
| US10854523B2 | Semiconductor device | Electricity | 1 | Active |
| US8878333B2 | Semiconductor device having improved RF characteristics and moisture resistance and method for manufacturing the same | Electricity | 1 | Active |
| US8816493B2 | Semiconductor device | Electricity | 1 | Active |
| US6819119B2 | Method for evaluating a crystalline semiconductor substrate | Physics | 1 | Expired |
| US6911837B2 | Method and apparatus for evaluating and adjusting microwave integrated circuit | Electricity | 1 | Expired |
| US8232609B2 | Semiconductor device including field effect transistor with reduced electric field concentration | Electricity | 0 | Active |
| US6998615B2 | Method for evaluating piezoelectric fields | Physics | 0 | Expired |
| US7700972B2 | Semiconductor device | Electricity | 0 | Active |
| US9117742B2 | High electron mobility transistor with shortened recovery time | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.