High speed bipolar transistor using a patterned etch stop and diffusion source
US5616508A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 9, 1995 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | Jan 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/421
Abstract
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A base electrode (114) is formed over at least one end portion of the base-link diffusion source layer (118) and the exposed portions of the base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.