Process for fabricating integrating circuits
US5616518A · kind A · utility
186Cited by
12References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1994 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | Nov 3, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits employing titanium nitride are significantly improved by using a specific method for formation of the titanium nitride in the device fabrication. In particular, a plasma such as one formed in an electron cyclotron resonance apparatus is employed to dissociate a source of nitrogen and a source of hydrogen and the dissociation products are combined at the integrated circuit deposition substrate with titanium tetrachloride. The resulting deposition is essentially devoid of chlorine and has advantageous step-coverage properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.