MOS-controlled power semiconductor component for high voltages
US5616938A · kind A · utility
3Cited by
2References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 26, 1995 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
In an MOS-controlled power semiconductor component having a multiplicity of cathode cells, the surface area proportion of the cathode cells relative to the total component surface area is selected at between 0.1% and 10% in the case of circular cell geometry and between 0.4% and 40% in the case of strip-shaped cell geometry. As a result of this, the susceptibility to oscillation caused by small inductances can be reduced. (FIG. 1)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.