Structure of contact between wiring layers in semiconductor integrated circuit device
US5616961A · kind A · utility
25Cited by
3References
37Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1995 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | Feb 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation film is interposed between a first-level wiring layer and a second-level wiring layer. A contact hole is formed in the insulation film on the first-level wiring layer to electrically connect the first-level wiring layer and second-level wiring layer. The contact hole is larger than the width of the first-level wiring layer and second-level wiring layer. The second-level wiring layer is formed on a side wall and a bottom portion of the contact hole and electrically connected to the first-level wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.