Semiconductor laser and method for manufacturing the same
US5617438A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1995 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | Dec 11, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5.times.10.sup.18 /cm.sup.3 of Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.