Selective deposition process
US5618379A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1991 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Apr 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating, so as to provide a selective deposition, where the coating is formed only on those areas of the substrate where desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.