Method of making light valve device using semiconductive composite substrate
US5618739A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68363
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.