Semiconductor diode in which electrons are injected into a reverse current
US5619047A · kind A · utility
9Cited by
0References
9Claims
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Assignee
Inventor
Key dates
| Filing date | Sep 12, 1995 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Sep 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
A diode (1) is specified which has electron injection means on the anode-side principal surface (3). After the reverse-current peak has been traversed, said means inject electrons into the anode emitter. This compensates for holes and the danger of a dynamic field overshoot, which may result in an avalanche breakdown, is reduced. The electron injection means preferably comprise an n-channel MOS cell. High voltages and high dI/dt values can be safely handled with a diode according to the invention. A diode in accordance with the invention is preferably used as freewheeling diode in a converter circuit arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.