Sense amplifier for semiconductor memory device having feedback circuits
US5619467A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A current sense amplifier circuit for a semiconductor memory device includes a differential amplifier which senses the signal currents input to first and second input nodes, amplifies the difference between the two signals and outputs the sense-amplified signals to first and second output nodes. A first feedback circuit is connected between the second input node and a current controlling node and has a controlling terminal connected to the first output node. A second feedback circuit is connected between the first input node and the current controlling node and has a controlling terminal connected to the second output node. By feeding back voltages from the counterpart output nodes through the cross-connected feedback circuits, the difference between low level input signals can be efficiently detected and a stable sense-amplified output is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.