Jai-Hoon Sim
20Patents
10h-index
18Co-inventors
72Inventor score
Filing activity: Feb 17, 1995 → Sep 24, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5701268A | Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same | Physics | 50 | Expired |
| US6133116A | Methods of forming trench isolation regions having conductive shields therein | Electricity | 40 | Expired |
| US6440793B1 | Vertical MOSFET | Electricity | 37 | Expired |
| US5703475A | Reference voltage generator with fast start-up and low stand-by power | Physics | 25 | Expired |
| US5654928A | Current sense amplifier for use in a semiconductor memory device | Physics | 20 | Expired |
| US5656946A | Mode-selectable voltage driving circuit for use in semiconductor memory device | Physics | 18 | Expired |
| US6414347B1 | Vertical MOSFET | Electricity | 17 | Expired |
| US5946243A | Signal line driving circuits with active body pull-up capability for reducing boost delay | Physics | 15 | Expired |
| US6441422B1 | Structure and method for ultra-scalable hybrid DRAM cell with contacted P-well | Electricity | 14 | Expired |
| US5686735A | Silicon-on-insulator (SOI) transistor | Electricity | 14 | Expired |
| US5619467A | Sense amplifier for semiconductor memory device having feedback circuits | Physics | 10 | Expired |
| US7977726B2 | DRAM cell with enhanced capacitor area and the method of manufacturing the same | Electricity | 3 | Active |
| US6214661A | Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device | Electricity | 3 | Expired |
| US7541241B2 | Method for fabricating memory cell | Electricity | 2 | Active |
| US9231066B2 | Semiconductor device having vertical channel | Electricity | 1 | Active |
| US6329249A | Method for fabricating a semiconductor device having different gate oxide layers | Electricity | 0 | Expired |
| US9196617B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
| US8084321B2 | DRAM cell with enhanced capacitor area and the method of manufacturing the same | Electricity | 0 | Active |
| US8467220B2 | DRAM device and manufacturing method thereof | Electricity | 0 | Active |
| US8872259B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.