Etching of copper-containing devices
US5620558A · kind A · utility
2Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1994 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Mar 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/388
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.