Method of etching or removing W and WSi.sub.x films
US5620615A · kind A · utility
27Cited by
6References
40Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Nov 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention teaches a method for etching or removing a tungsten (W) film and a tungsten silicide (WSi.sub.x) film during a semiconductor fabrication process, by the steps of: removing any exposed portions of the W or WSi.sub.x film by presenting an etchant chemistry comprising NF.sub.3 and HeO.sub.2 to these exposed portions at a temperature ranging from -20.degree. C. to 100.degree. C. The etchant chemistry is also effective for dry cleaning a deposition chamber by removing previously deposited films of W or WSi.sub.x.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.