Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride
US5620910A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Jun 22, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made the largest in the interface between the film and the adjacent gate electrode, and the material constituting the gate electrode is prevented from being diffused into the gate insulating film. In the film, the nitrogen content is made the largest in the interface between the film and the adjacent active layer, and hydrogen ions, etc. are prevented from being diffused from the active layer into the gate insulating film. Prior to the formation of the gate insulating film, the surface of the active layer is irradiated to laser rays or intense rays comparable to laser rays, so as to be oxidized or nitrided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.