Semiconductor device including a silicon film having an irregular surface
US5621224A · kind A · utility
204Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Oct 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor with high performance and improved productivity is offered using crystalline silicon film. As the crystalline silicon film that constitutes the active layer of thin film transistor, the one which has irregularities of 100 to 700 .ANG. in level difference is used. Such crystalline silicon film can be obtained by performing laser light irradiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.