Surface emission type semiconductor laser, method and apparatus for producing the same
US5621750A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Jul 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105). A surface emission type semiconductor laser is designed such that the lasing wavelength .lambda..sub.G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength .lambda..sub.EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) .DELTA..lambda..sub.EM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.