Semiconductor laser and light-sensing device using the same
US5623509A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1995 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | Feb 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser comprises AlGaAs-type semiconductor layers deposited on a substrate and a current constriction layer having at least one stripe-shaped current injection region. This semiconductor layers comprise: a first cladding layer of the first conductivity type, a first optical waveguide layer of the first conductivity type formed on the first cladding layer, an active layer formed on the first optical waveguide layer and having a quantum-well structure, a second optical waveguide layer of a second conductivity type formed on the active layer, a second cladding layer of the second conductivity type formed on the second optical waveguide layer, and a contact layer formed on the second cladding layer. The active layer has flatness of such a degree that roughness with respect to a reference surface within a unit area of 1 mm.times.1 mm is no more than .+-.0.1 .mu.m, the width of the current injection region of the current constriction layer is between 100 .mu.m to 250 .mu.m, and the resonator length is between 500 .mu.m to 1,000 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.