Chemically amplified positive resist composition
US5624787A · kind A · utility
19Cited by
4References
22Claims
0Family size
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Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.