Process of producing insulated-gate bipolar transistor
US5624855A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 19, 1995 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Jun 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/491
Abstract
An insulated-gate bipolar transistor includes a semiconductor region of a first conductive type; a base layer of a second conductive type diffused from a surface of the semiconductor region; a source layer of the first conductive type diffused in a surface portion of the base layer; an insulated gate buried in a recess dug from the surface of the source layer through the base layer up to the semiconductor region; a collector layer of the second conductive type diffused from a surface of the semiconductor region on an opposite side of the insulated gate with respect to the source layer; an emitter terminal drawn from the base layer and the source layer; a collector terminal drawn from the collector layer; and a gate terminal drawn from the insulated gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.