Surface emitting semiconductor laser and its manufacturing process
US5625637A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1994 |
| Grant date | Apr 29, 1997 |
| Priority date | — |
| Expiry date | Dec 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser, with a resonator cavity transverse to the planar extent of the deposited layers, is provided with a first reflection mirror on the substrate side composed of alternating layers comprising a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. A second reflection mirror is provided at the opposite end of the cavity adjacent to a column like resonator portion. At least the first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. The column like resonator portion is surrounded by a buried layer which may consist of two layers, the first layer functioning as barrier layer and the second layer functioning as a flattening layer. The first layer may be comprised of a silicon compound and the second layer may be comprised of SOG or a resin compound. The multiple layer band structure of the DBR mirror is improved, current easily flow…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.