Deep trench dram process on SOI for low leakage DRAM cell

US5627092A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Johann Alsmeier · San Jose, US
• Reinhard Stengl · Stadtbergen, DE

Key dates

• Filing date: Sep 26, 1994
• Grant date: May 6, 1997
• Expiry date: Sep 26, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A deep trench DRAM cell is formed on a silicon on isolator (SOI) substrate, with a buried strap formed by outdiffusion of dopant in associated trench node material, for providing an electrical connection between the trench node and the active area of a MOS transfer gate formed in the substrate adjacent the trench in an uppermost portion of the substrate.