Plasma etch process and TiSi.sub.x layers made using the process
US5627105A · kind A · utility
32Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1993 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Apr 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer over the Ne etched surface and then rapidly thermally causing the metal layer to react with the underlying silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.