Multilevel interconnect structure
US5627345A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1994 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Feb 18, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilevel interconnect structure for use in a semiconductor device includes a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. An interlayer insulating film is deposited on the lower metal wiring and a via hole is formed in the interlayer insulating film. A plug made of aluminum or aluminum alloy is formed in the via hole. An upper metal wiring has an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. The plug directly contacts the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.