Silicon nanostructure light-emitting diode

US5627386A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• James F. Harvey · Tinton Falls, US
• Robert A. Lux · Toms River, US
• Raphael Tsu · Huntersville, US

Key dates

• Filing date: Oct 27, 1995
• Grant date: May 6, 1997
• Expiry date: Oct 27, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/826

Abstract

The invention provides light sources which are easily compatible with standard silicon VLSI processing and can be located directly in the material of the silicon VLSI chip. P-type silicon substrate is processed to produce proturbances, the proturbances preferably having tip dimensions on the order of 5-10 mm. A native oxide film (SiO.sub.2) is caused to develop on the surface of the silicon substrate. A thin, transparent, conductive film is then deposited on top of the SiO.sub.2. Electrical contacts are made to the top of the conductive film and to the bottom of the silicon substrate. The carriers for electroluminescence are supplied by the P-doped silicon substrate (holes) and the conductive film (electrons). When a voltage is applied across the layers via the electrical contacts, the holes are concentrated in the region of the tip of the proturbances because the electric field lines concentrate near a pointed object, and electron current across the SiO.sub.2 barrier in response to the voltage drop will be largest in the vicinity of the tip because the SiO.sub.2 barrier is thinnest there, resulting in strong visible luminescence.